• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    This process relates to the preparation by ALD of a thin layer of formula MYx, X being between 1.5 and 3.1. According to this method, a deposition of MYx by ALD is carried out on a substrate, starting from at least one precursor of the metal M, and at least one precursor of the element Y; M being tungsten and / or molybdenum; the degree of oxidation of the metal M in the precursor of the metal M being between 3 and 6; the metal precursor metal M comprising only single or multiple M-Z and / or M-M bonds with Z = C, N, H, and any combination of these atoms; - Y being sulfur and / or selenium; the temperature of the substrate being less than or equal to 350 ° C.
    公开号:FR3016889A1
    申请号:FR1450598
    申请日:2014-01-24
    公开日:2015-07-31
    发明作者:Stephane Cadot；Francois Martin；Elsje Quadrelli；Chloe Thieuleux
    申请人:Centre National de la Recherche Scientifique CNRS；Universite Claude Bernard Lyon 1 UCBL；Commissariat a lEnergie Atomique CEA；CPE-Lyon-FCR；CPE Lyon Formation Continue et Recherche SAS；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] The invention relates to a process for producing a thin-film material of the MY 'type, M being tungsten and / or molybdenum, and Y being the process of producing a thin-film material of the type MY'. sulfur and / or selenium. The field of use of the present invention relates in particular to electronics.
    [0002] PRIOR STATE OF THE ART The use of materials of the MY 'type (M = Mo, W, Y = S, Se) in catalysis or in the field of lubricant coatings has led to the development of various manufacturing techniques, and more particularly : the sulphidation of the metal oxides MoO3 and WO3 with H25 or with an H2 / H25 mixture; the thermal decomposition of thiomolybdates or thiotungstates; reactive sputtering; the decomposition (thermal and / or tribological) of dithiocarbamates, thiophosphates or thioxanthates of molybdenum or tungsten; chemical vapor deposition (CVD) by reaction between a precursor of the metal such as MoF6, MoC15 or Mo (CO) 6, and a sulfur precursor such as hydrogen sulphide or elemental sulfur; single-precursor vapor phase deposition (CVD) by thermal decomposition of dithiocarbamates or molybdenum tetrathiolate (IV); the deposition of a material of type MY2 (W52) per atomic layer (ALD) from volatile halogenated precursors of the metal (WF6). However, these processes generally lead to: porous deposits (particles); or deposits systematically containing impurities, particularly O, C, Cl and F, since the only examples of direct MoS2 or W52 DDS described to date use chlorides or fluorides of Mo and W; or the formation of corrosive compounds such as HF and HC1.35 Furthermore, they do not allow precise control of the thickness of the deposit forming the thin layer. On the other hand, the thin layer obtained according to these methods has crystalline planes that are not all oriented in the same direction with respect to the substrate on which the deposition has been made. In other words, these methods do not generally make it possible to control the orientation of the crystalline planes in the deposited layer. Although this characteristic is not a disadvantage in the field of catalysis for example, it can be problematic for use in electronics in particular.
    [0003] Other examples of methods of the prior art for forming MoS2-type thin films include: sulphuring a preformed MoO2 deposit with elemental sulfur at 1000 ° C .; the CVD deposition of MoO 3 oxide and elemental sulfur at 650 ° C .; the physical transport of MoS2 in the vapor phase at 900 ° C .; the CVD deposition of MoC15 + H2S at 600 ° C. This method makes it possible to form a layer of 50 nanometers of oriented MoS2. However, it does not allow precise control of the thickness of the layer; sputtering which can also allow the formation of an oriented deposit. However, this method does not make it possible to control the thickness very precisely, in particular because of the lack of homogeneity of the deposit. Indeed, this technique makes it possible to control the thickness of the deposit to a few tens of nanometers.
    [0004] However, these techniques have the disadvantage of requiring very high temperatures, often above 650 ° C, which prove to be incompatible with the manufacturing processes of integrated circuits. In addition, they generally do not allow the controlled formation of hybrid layers, that is to say a layer containing a mixture of different elements M and / or different elements Y which have been deposited successively. An alternative is to exfoliate MY2 layers with an adhesive. However, this technique is limited in terms of reproducibility and applicability on a large scale. On the other hand, it does not allow the formation of hybrid thin films on an industrial scale. It also requires a very pure and very crystalline material.
    [0005] In order to remedy these problems, the Applicant has developed a method for preparing, under mild conditions (deposition temperature below 350 ° C., absence of halogenated impurities), a thin film of the type MY ', by means of successive and self-limiting deposits of a precursor containing M and another precursor containing Y. Thus, this method not only makes it possible to control the thickness of the thin layer more precisely than the methods of the art but also the formation of layers hybrids. SUMMARY OF THE INVENTION The present invention relates to a process for preparing a material MY 'in the form of a thin layer which may be amorphous, partially crystalline, or totally crystalline.
    [0006] By "thin layer" is meant a layer of material whose thickness is advantageously between 0.5 and 100 nanometers, more preferably less than 10 nanometers, and even more preferably less than 5 nanometers. In relatively mild conditions, in terms of processing temperature, the method - object of the invention makes it possible to control the thickness and the stoichiometry of the thin layer of MYx. In addition, the process according to the present invention also makes it possible to form a hybrid thin film MY 'in which M is molybdenum and / or tungsten and Y is sulfur and / or selenium. More specifically, the subject of the present invention relates to a process for preparing by ALD a thin film of formula MY ', x being between 1.5 and 3.1. This method comprises the deposition step of ALD (of the English "Atomic Layer Deposition" that is to say deposit by atomic layer) of MY 'on a substrate from at least one precursor of the metal M, and at least one precursor of the element Y; M being tungsten and / or molybdenum (in other words, M is selected from the group consisting of tungsten, molybdenum, and tungsten / molybdenum); the degree of oxidation of the metal M in the precursor of the metal M being between 3 and 6, preferably equal to 3, 4 or 6; the precursor metal of the metal M comprising only M-Z and / or M-M bonds with Z = C, N, H and any combination of these atoms; Y being sulfur and / or selenium (in other words, Y is selected from the group consisting of sulfur, selenium, and sulfur / selenium mixture). The M-Z and M-M bonds mentioned above are bonds that can be single or multiple; the temperature of the substrate being less than or equal to 350 ° C. Advantageously, in the formula My ,, x is between 1.8 and 3.1, more advantageously between 1.9 and 3, and even more advantageously between 2 and 3. According to a particularly advantageous embodiment, x = 2. used to analyze the composition of the thin film of formula MY 'include the following techniques: - elemental analysis; dispersive energy analysis: EDS or EDX (energy dispersive X-ray spectrometry); secondary ionization mass spectrometry: SIMS (Secondary Ion Mass Spectrometry); X-ray induced photoelectron spectrometry: XPS (X-Ray photoelectron spectrometry). In general, the measuring apparatus is first calibrated on a reference sample according to a conventional procedure forming part of the general knowledge of the skilled person. Particular embodiments of the process according to the invention The deposition by ALD of the thin film MY 'is carried out in an enclosure in which the precursors of the metal M and of the element Y are introduced separately. According to the implementation of the ALD technique, the precursors are introduced into a deposition chamber, alternately, and in gaseous form, in order to control the formation of the thin layer. Indeed, the simultaneous introduction of the precursors could cause a reaction between them before reaching the substrate on which the thin layer is formed.
    [0007] The precursors are generally introduced in gaseous form. They are transported to the deposition zone by an inert gas (argon or nitrogen, for example). However, and according to a particular embodiment, they can be introduced in diluted form in a solvent which is not very reactive and sufficiently volatile (toluene, benzene, hexane, for example). This dilute precursor solution is then nebulized in the stream of the carrier gas in the form of a spray. Each precursor is introduced by "pulse". Each pulse corresponds to the drive towards the substrate of one of the precursors, by a flow of gas for a period of time necessary to obtain an optimum recovery of the substrate. Those skilled in the art will be able to adjust the necessary parameters according to the conventional methods of deposit by ALD. According to a particular embodiment, the deposition by ALD comprises the introduction into a deposition chamber of at least one precursor of the metal M, and then the introduction of at least one precursor of the element Y. According to another particular embodiment, the deposition by ALD comprises the introduction into a deposition chamber of at least one precursor of the element Y, and then the introduction of at least one precursor of the metal M. The deposit by ALD can thus comprising the following steps: a) introducing a first precursor of the metal M or the element Y into a deposition chamber; b) optionally, purging the deposition chamber with an inert gas (argon or nitrogen for example) to remove the unreacted species; c) introducing a second precursor into the deposition chamber, the second precursor being a precursor of the metal M when the first precursor is a precursor of the element Y or a precursor of the element Y when the first precursor is a precursor of the metal M; d) optionally, purging the deposition chamber with an inert gas (argon or nitrogen for example) to remove the unreacted species; e) reiteration of steps a) to d).
    [0008] Optionally, the introduction of the first precursor is preceded by a step of purging the deposition chamber. The inert purge gas is usually argon or nitrogen. It can be any gas that does not react with the precursors.
    [0009] Steps a) to d) are generally repeated until a thin layer having the desired thickness is obtained. The precursors used in the so-called reiteration steps can be identical to the precursors initially used or distinct. For example, molybdenum precursors of different nature may be used to form a MoYx thin film. Different metal precursors can also be used to form a hybrid thin film MY 'with M = Mo + W. The same is true for the precursor (s) of Y. Thus, and in general, the deposition by ALD can comprise on the one hand the introduction of precursors of tungsten and / or molybdenum metals, and on the other hand the introduction of precursors of sulfur and / or selenium elements. This particular embodiment makes it possible to form a hybrid thin film MY ', in which M = (Mo and / or W) and Y = (S and / or Se).
    [0010] During the introduction of the first precursor, the surface of the substrate is advantageously saturated with metal M or element Y, so as to form a homogeneous deposit which advantageously covers the entire substrate. Each subsequent introduction of M or Y precursor makes it possible to saturate the surface of the previously deposited layer.
    [0011] As already mentioned, the introduction of the precursors of the metal M and the element Y is carried out alternately. The order of introduction may in particular depend on the nature of the substrate.
    [0012] For example and according to a particular embodiment, especially when the substrate is of the metal oxide or organic oxide type, the process may comprise the following pulse sequence: precursor of the metal M, precursor of the element Y, precursor of metal M, - precursor of element Y. According to another particular embodiment, especially when the substrate is made of metal (copper or gold for example), the method may comprise the following pulse sequence: - precursor of the element Y, precursor of the metal M, precursor of the element Y, precursor of the metal M, precursor of the element Y. Those skilled in the art will be able to adapt the frequency and the repetition of the pulses according to the rate of covering the desired substrate.
    [0013] The deposition by ALD consists in particular in bringing the precursors to the temperature necessary to obtain a sufficient vapor pressure at the working pressure. The precursor is then driven to the substrate by a gaseous flow that may be inert or reactive. The general knowledge of the skilled person will allow him to adjust the amount of precursor to be injected at each pulse, and the implementation of the deposit by ALD. In the context of the present invention, the deposition by ALD of the thin film MY 'is carried out at a temperature of less than or equal to 350 ° C. In other words, and as already indicated, the temperature of the substrate is less than or equal to 350 ° C. It is more advantageously between 0 and 350 ° C., and even more advantageously between 120 and 300 ° C. The deposition temperature can be adapted according to the nature of the pair of precursors used. Those skilled in the art will know how to adapt the temperature according to the nature of the pair of precursors used. However, the deposition by ALD is advantageously carried out at the same temperature for all the precursor pulses used.
    [0014] It can also be carried out under reduced pressure. In general, the method - object of the invention is applicable to large scale production, and provides a thin layer MY 'while ensuring the following technical effects: - precise control of the thickness of the deposit; - possibility of preparing hybrid thin films; - absence of impurities related to the elements O, F, Cl, Br, and I; deposition made at low temperature (<350 ° C); no discharge of dihalogen compounds or hydrogen halides which would not only cause corrosion of the reactor but also of the deposit and the substrate.
    [0015] Precursors In general, the precursors of the metal M and the element Y are thermally stable at the deposition temperature by ALD. On the other hand, they have a vapor pressure suitable for the working pressure and a reactivity allowing their implementation by ALD, at a temperature of less than or equal to 350 ° C. The precursors of the metal M are compounds comprising ligands, that is to say groups directly bonded to the metal M. During the formation of the thin film MY ', these ligands are fully substituted by the elements Y. As already indicated, the precursor of the metal M is a compound of tungsten or molybdenum comprising MZ and / or MM bonds with Z = C, N, H and any combination of these atoms. It can be single, double or triple covalent bonds. However, and according to a particular embodiment, the precursor metal of the metal M comprises only single and / or double bonds with nitrogen. In addition, the precursor of the metal M is free of halogens. It is also preferably free of oxygen.
    [0016] It is advantageously mono-metallic or bi-metallic compounds, advantageously mono-metallic. Advantageously, the precursor of the metal M is chosen from the group comprising the compounds Mo (NMe 2) 4; M (= N-CMe3) 2 (NMe2) 2; Mo (NEtMe) 4; and MeMe2) 6; with M = molybdenum or tungsten, Me = -CH3, and = -CH2-CH3. As regards the precursor of the element Y, it is advantageously devoid of halogens and oxygen. Typically, the precursor of the Y element may be selected from the group consisting of YR2; Y2R2; Y3R2; Y2R3 (with R = H and / or alkyl and / or allyl and / or aryl). The alkyl group R mentioned above is advantageously a linear or branched alkyl comprising 1 to 8 carbon atoms, and even more advantageously 1 to 4 carbon atoms. The precursor of element Y may be used alone or in admixture with hydrogen. The compounds YR2, Y2R2, Y3R2, and Y2R3, with YR2 YH2, are advantageously used in a mixture with hydrogen. However, and according to a preferred embodiment, the precursor of the element Y is H2Y, alone or in admixture with hydrogen.
    [0017] The introduction of the precursor of the element Y into the deposition chamber may also be followed by a pulse of hydrogen which makes it possible to clean any traces of remaining ligand and reactivate the surface for the next pulse of the precursor of M. As indicated above, a mixture of precursors may also be used. For example, a hydrogen / alkyl polysulfide mixture such as dimethyl disulfide DMDS or diethyl disulfide DEDS can be used. This mixture in-situ produces a mixture of thiols and H2S from 150 ° C and in the presence of Mo or W. In addition, the use of a mixture containing a precursor of the element Y and hydrogen can have the following advantages: - Possibility of obtaining an oxidizing or reducing mixture which can (include several precursor compounds of the element Y) as a function of the temperature and the hydrogen content, thus making it possible to better control the Y / M ratio; the presence of hydrogen promotes the formation of -YH groups on the surface of the substrate. The presence of these groups is particularly advantageous in view of their better reactivity with respect to the precursor of the metal M relative to -Y-alkyl groups; alternatively, a hydrogen plasma can be used as a carrier gas for an alkyl disulfide or diselenide, thus making it possible to lower the reaction temperature by forming more reactive Y radicals.
    [0018] Annealing The method - object of the invention may comprise an optional annealing step at the end of the formation of the thin layer of formula MYx. It makes it possible to form a crystalline thin layer whose formula is advantageously MY2. Indeed, during annealing, the possible excess of compound Y is eliminated. Therefore, at the end of the annealing, x is advantageously equal to 2. As already indicated, the deposition by ALD makes it possible to control the formation of the thin layer which can be amorphous, partially crystalline or totally crystalline at the end of the deposition. . However, and advantageously, the deposition temperature by ALD does not allow the crystallization of the thin layer of MYx. This condition makes it possible in particular to avoid the formation of crystals oriented in a completely random manner with respect to the substrate. Thus, the nature of the precursors used makes it possible to operate at a temperature below the crystallization temperature of the MYx material. It is only at the end of its formation that the thin layer of MY 'can be crystallized during an annealing step. The annealing step is therefore particularly suitable for cases where the layer of deposited MY 'is amorphous or partially crystalline. During annealing, the thin layer is densified. Thus, and advantageously, the thin layer forms a crystal lattice whose basal planes (leaflets) are advantageously stacked in planes parallel to the surface of the substrate on which it is formed. Typically, the annealing temperature is advantageously between 200 and 1000 ° C, more preferably between 350 and 700 ° C. In general, the annealing is carried out under vacuum or under an inert atmosphere (nitrogen, argon, etc.) in order to avoid a reaction of the oxygen of the air with the deposit. Alternatively, it can be carried out under hydrogen to facilitate crystallization, and the removal of excess Y if necessary. The advantages associated with the annealing step may be the following: - low surface roughness, compared with the thin layers of the prior art, the high temperature deposition of which generally promotes growth at the edge of the crystallites, which leads to to structures in petals, microspheres or microtubes. access to different crystalline phases of MoS2 according to the temperature and the duration of the annealing. - Obtaining crystalline sheets whose basal planes are oriented parallel to the plane of the substrate on which is deposited the thin layer.
    [0019] Substrate As already indicated, the order of introduction of the precursors of M or Y may depend on the nature of the substrate.
    [0020] The deposition is carried out on a heatable substrate so that its temperature is sufficient to observe a self-limited growth without residues or thermal decomposition of the precursors.
    [0021] The surface of the substrate on which the deposition of the thin layer is produced is advantageously a metal surface, any organic oxide or metal, any sulphide or selenide of a metal, any organic sulphide or selenide. In general, surfaces having -OH, -SH, -SeH terminations are particularly suited to metal precursor pulses, i.e., the initial introduction of metal precursor M while The metal elements are generally more suitable for the initial introduction of the precursor of the element Y. According to a particular embodiment, before the implementation of the method which is the subject of the invention, the substrate may be subjected to a chemical treatment aimed at form or introduce the endings in -OH, -SH or -SeH previously mentioned. Controlled hydration of a metal oxide type support will, for example, make the surface reactive by forming -OH groups. In addition, the grafting of chloro- or alkoxy-silane type compounds having a reactive functionality with respect to the precursor of the metal M may be used before the deposition of the thin layer MYx.
    [0022] The present invention also relates to the thin layer MYx obtainable by the method described above, but also to its use, especially in electronics. The thin layer of MY 'may comprise a partially or completely oxidized surface layer, in particular by exposure to air. In this case, it can be considered as a protective layer of the thin film material of MYx. On the other hand, a surface layer of graphite or metal oxide type may be deliberately set up at the end of the process so as to pass the MYX layer. This optional step can be performed before or after the annealing. 15
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. A process for the preparation by ALD of a thin film of formula MY ', x being between 1.5 and 3.1, in which a deposit of MY' is produced by ALD on a substrate, starting from at least one precursor of the metal M, and at least one precursor of the element Y; M being tungsten and / or molybdenum; the degree of oxidation of the metal M in the precursor of the metal M being between 3 and 6; the metal precursor metal M comprising only single or multiple M-Z and / or M-M bonds with Z = C, N, H, and any combination of these atoms; - Y being sulfur and / or selenium; the temperature of the substrate being less than or equal to 350 ° C. 15
    [0002]
    2. Method according to claim 1, characterized in that the deposition by ALD comprises the introduction into a deposition chamber of at least one precursor of the metal M, and then the introduction of at least one precursor of the element. Y. 20
    [0003]
    3. Method according to claim 1, characterized in that the deposition by ALD comprises the introduction into a deposition chamber of at least one precursor of the element Y, and then the introduction of at least one precursor of the metal Mr.
    [0004]
    4. Method according to one of claims 1 to 3, characterized in that the deposition by ALD comprises on the one hand the introduction of precursors of tungsten and / or molybdenum metals, and on the other hand the introduction of precursors sulfur and / or selenium elements.
    [0005]
    5. Method according to one of claims 1 to 4, characterized in that it comprises the following steps: a) introducing a first precursor of the metal M or Y element in a deposition chamber; b) purging the deposition chamber with an inert gas; c) introducing a second precursor into the deposition chamber, the second precursor being a precursor of the metal M when the first precursor is a precursor of the element Y or a precursor of the element Y when the first precursor is a precursor of the metal M; d) purge the deposition chamber with an inert gas; e) reiteration of steps a) to d).
    [0006]
    6. Method according to one of claims 1 to 5, characterized in that the temperature of the substrate is between 0 and 350 ° C, and preferably between 120 and 300 ° C.
    [0007]
    7. Method according to one of claims 1 to 6, characterized in that the precursor of the metal M is selected from the group consisting of Mo (NMe2) 4; M (= N-CMe3) 2 (NMe2) 2; Mo (NEtMe) 4; and M2 (NMe2) 6; with M = molybdenum or tungsten, Me = -CH3, and = -CH2-CH3.
    [0008]
    8. Method according to one of claims 1 to 7, characterized in that the precursor of the element Y is selected from the group comprising YR2; Y2R2; Y3R2; and Y2R3, with R = H and / or alkyl and / or allyl and / or aryl.
    [0009]
    9. Method according to one of claims 1 to 8, characterized in that the precursors of the metal M and the element Y are free of halogens and oxygen.
    [0010]
    10. Method according to one of claims 1 to 9, characterized in that it comprises an annealing step after formation of the thin film of formula MY ', the annealing temperature being between 200 and 1000 ° C.
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    同族专利:
    公开号 | 公开日
    EP2899295B1|2016-09-14|
    US20150211112A1|2015-07-30|
    FR3016889B1|2016-01-22|
    EP2899295A1|2015-07-29|
    引用文献:
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    US4867840A|1986-05-16|1989-09-19|Exxon Research And Engineering Company|Method of making artifically textured layered catalyst|
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    US9245742B2|2013-12-18|2016-01-26|Asm Ip Holding B.V.|Sulfur-containing thin films|JP6929790B2|2015-05-27|2021-09-01|エーエスエム アイピー ホールディング ビー．ブイ．|How to synthesize and use precursors for ALD of molybdenum or tungsten-containing thin films|
    US10358407B2|2016-10-12|2019-07-23|Asm Ip Holding B.V.|Synthesis and use of precursors for vapor deposition of tungsten containing thin films|
    FR3058162B1|2016-11-02|2021-01-01|Commissariat Energie Atomique|DEPOSIT PROCESS FOR THIN CHALCOGENURE FILMS|
    US10916426B2|2018-05-25|2021-02-09|Applied Materials, Inc.|Formation of crystalline, layered transition metal dichalcogenides|
    US11142824B2|2019-04-23|2021-10-12|Uchicago Argonne, Llc|Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others|
    KR20210009160A|2019-07-16|2021-01-26|삼성전자주식회사|Method for forming thin film of transition metal dichalcogenide|
    FR3105591A1|2019-12-20|2021-06-25|Commissariat A L'energie Atomique Et Aux Energies Alternatives|METHOD OF MANUFACTURING A LAYER OF TEXTURED ALUMINUM NITRIDE|
    法律状态:
    2015-02-02| PLFP| Fee payment|Year of fee payment: 2 |
    2016-02-01| PLFP| Fee payment|Year of fee payment: 3 |
    2017-01-31| PLFP| Fee payment|Year of fee payment: 4 |
    2018-01-31| PLFP| Fee payment|Year of fee payment: 5 |
    2020-01-30| PLFP| Fee payment|Year of fee payment: 7 |
    2021-01-28| PLFP| Fee payment|Year of fee payment: 8 |
    2022-01-31| PLFP| Fee payment|Year of fee payment: 9 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1450598A|FR3016889B1|2014-01-24|2014-01-24|PROCESS FOR REASLISTING BY ALD A THIN LAYER OF MYX FORMULA|FR1450598A| FR3016889B1|2014-01-24|2014-01-24|PROCESS FOR REASLISTING BY ALD A THIN LAYER OF MYX FORMULA|
    US14/603,829| US20150211112A1|2014-01-24|2015-01-23|Method of forming by ALD a thin film of formula MYx|
    EP15152387.5A| EP2899295B1|2014-01-24|2015-01-23|Method for producing a thin layer of formula MYx by ALD|
    US16/273,510| US20190177838A1|2014-01-24|2019-02-12|Method of forming a crystalline thin film having the formula my2 using an ald-formed amorphous thin film having the formula myx as a precursor|
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